GPT200 fast recovery diode bridge target specification fast recovery time characteristics insulated base voltage up to 600 v dc output current 60 a blocking characteristics characteristic conditions v r repetitive cathode to anode voltage 600 v i rrm repetitive peak reverse current, max. v r , single phase, half wave, tj = tjmax 5 ma v isol rms insulation voltage any terminals to case, t= 1 min 2500 v forward characteristics i f maximum dc output current tc = 85c 60 a i fsm surge forward current single pulse , t j = 25 c 300 a v f(to) threshold voltage t j = t jmax 0,914 v r f forward slope resistance t j = t jmax 10,5 m w v fm peak forward voltage, max forward current i f = 30 a, tj = tjmax 1,23 v switching characteristics q rr rverse recovery charge, typ t j = 25c, i f = 20 a, di/dt = -100 a/s 1,2 nc i rr reverse recovery current v r = 30 v 10 a t rr reverse recovery time, typ 160 ns thermal and mechanical characteristics r th(j-c) thermal resistance (junction to case) both leg conduction 0,4 c/w t jmax max operating junction temperature 150 c f mounting torque 1,3 nm mass 30 g document GPT200t001 value gps - green power semiconductors spa factory: via ungaretti 10, 16157 genova, italy phone: +39-010-667 1307 fax: +39-010-667 2459 web: www.gpsemi.it e-mail: info@gpsemi.it green power semiconductors
|
